What is Waveguide?

A structure that confines and guides light by surrounding a high-index core with a lower-index cladding. Silicon photonics commonly uses silicon about 0.5 µm × 0.22 µm in cross section surrounded by oxide, allowing bend radii of just a few µm.

Japanese name: 導波路

Waveguide appears in 17 practice questions across 1 topic, including Silicon photonics.

Silicon waveguide cross-sections (strip and rib) SiO₂ (n ≈ 1.45) Si (n ≈ 3.5) Optical mode SiO₂ cladding Buried oxide (BOX) Si substrate Width ~500 nm t = 220 nm SiO₂ cladding Buried oxide (BOX) Si substrate Width ~500 nm Slab Strip waveguide Rib waveguide Strong confinement, tight bends Slab connects to electrodes
Silicon waveguide cross-sections (strip and rib) · View in diagrams

Field: Silicon photonics

Try it: questions about Waveguide

Which correctly pairs the photon energy of 1.55 µm light with its behavior in a silicon waveguide? (E [eV] ≈ 1.24 / λ [µm])

  1. AAbout 1.9 eV. It exceeds silicon's band gap, so it is strongly absorbed and converted into current
  2. BAbout 0.8 eV. It is smaller than silicon's band gap, so it excites electrons into the conduction band and is strongly absorbed
  3. CAbout 0.8 eV. It is smaller than silicon's band gap, so it propagates with almost no absorption
Show answer and explanation

Answer: C. About 0.8 eV. It is smaller than silicon's band gap, so it propagates with almost no absorption

1.24 ÷ 1.55 ≈ 0.80 eV, which is smaller than silicon's band gap of about 1.12 eV, so it cannot lift valence-band electrons into the conduction band and no band-to-band absorption occurs. Silicon is therefore nearly transparent at telecom wavelengths and can serve as a waveguide material. Conversely, silicon alone cannot make a photodetector for this wavelength. Silicon absorbs light with wavelengths shorter than about 1.1 µm (energies above 1.12 eV). About 1.9 eV is the result of multiplying 1.24 by 1.55, and corresponds to the energy of red light at a wavelength of about 650 nm.

Which correctly describes a silicon waveguide (refractive index about 3.5) surrounded by oxide (SiO2, refractive index about 1.45)?

  1. AThe large index contrast lets light leak out easily, so the waveguide can only be bent at radii larger than an optical fiber's, making it unsuitable for integration
  2. BThe large index contrast confines light tightly, so it can be bent at small radii of a few µm and devices can be packed densely
  3. CThe larger the index contrast, the less sensitive it is to sidewall roughness, so propagation loss becomes as low as an optical fiber's
Show answer and explanation

Answer: B. The large index contrast confines light tightly, so it can be bent at small radii of a few µm and devices can be packed densely

Light is confined by total internal reflection at the boundary between the high-index core and the low-index surroundings (cladding), and the larger the index contrast, the tighter the confinement. The difference between silicon and oxide is about 2, orders of magnitude larger than the core–cladding difference in optical fiber (less than 1%), allowing thin waveguides with cross-sections of about 0.5 µm × 0.22 µm and bend radii down to a few µm. On the other hand, the larger the index contrast, the more sidewall roughness scatters light, so propagation loss—though condition-dependent—is about 1–3 dB/cm for a typical strip waveguide (lower for rib waveguides or low-loss processes), far greater than fiber's (about 0.2 dB/km).

Waveguide in the explanations

Questions that mention Waveguide (17)

  1. Which correctly pairs the photon energy of 1.55 µm light with its behavior in a silicon waveguide? (E [eV] ≈ 1.24 / λ [µm])
  2. Which correctly describes a silicon waveguide (refractive index about 3.5) surrounded by oxide (SiO2, refractive index about 1.45)?
  3. When light travels 5 mm through a silicon waveguide with a propagation loss of 2 dB/cm, which is closest to the fraction of optical power remaining at the output?
  4. Why is an inverse taper, in which the silicon waveguide narrows toward the chip edge, used in edge couplers?
  5. What is the main role of the buried oxide (BOX) layer in the SOI wafers used in silicon photonics?
  6. What is the main reason rib waveguides—shallowly etched so that thin silicon slabs remain on both sides—are often used in silicon optical modulators?
  7. Which is a correct advantage of a grating coupler for connecting optical fiber to a silicon photonic circuit?
  8. Which correctly describes an edge coupler, which couples to optical fiber at the chip facet, compared with a grating coupler?
  9. When a silicon photonic circuit receives light from standard single-mode fiber, which is a correct reason polarization becomes an issue?
  10. Which correctly explains why a silicon ring resonator responds strongly only to specific wavelengths?
  11. Why do optical circuits using ring resonators often place a heater near the ring to control its temperature?
  12. Which is a correct reason it is difficult to integrate an optical isolator together with a laser on a silicon photonic circuit?
  13. Which correctly describes wavelength division multiplexing (WDM)?
  14. What is the main reason silicon photonics is said to be well suited to mass production in semiconductor fabs?
  15. Which is considered one of the main causes of propagation loss (dB/cm) in silicon waveguides?

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Related terms

Propagation loss Band gap Refractive index Silicon photonics Single-mode fiber Grating coupler Dicing Edge coupler C-band Ring resonator

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