Silicon photonics
What is the main role of the buried oxide (BOX) layer in the SOI wafers used in silicon photonics?
- AIt acts as the absorption layer of a photodetector beneath the waveguide, absorbing telecom-wavelength light and converting it into current
- BIt acts as a light-emitting layer that generates light in the top silicon layer
- CIt serves as the lower cladding of the waveguide, preventing light from leaking into the silicon substrate
Show answer and explanation
Answer: C. It serves as the lower cladding of the waveguide, preventing light from leaking into the silicon substrate
An SOI (Silicon on Insulator) wafer consists of a silicon substrate topped with a buried oxide (BOX) and then a thin single-crystal silicon layer. Waveguides are formed by patterning the top silicon layer (220 nm thick is common), and the low-index BOX serves as the lower cladding. If the BOX is too thin, light extending outside the waveguide (the evanescent field) leaks into the high-index silicon substrate, so a thick BOX of about 2–3 µm is commonly used. Oxide has a large band gap and neither absorbs nor emits light.