Silicon photonics

Which correctly describes a silicon waveguide (refractive index about 3.5) surrounded by oxide (SiO2, refractive index about 1.45)?

  1. AThe large index contrast lets light leak out easily, so the waveguide can only be bent at radii larger than an optical fiber's, making it unsuitable for integration
  2. BThe large index contrast confines light tightly, so it can be bent at small radii of a few µm and devices can be packed densely
  3. CThe larger the index contrast, the less sensitive it is to sidewall roughness, so propagation loss becomes as low as an optical fiber's
Show answer and explanation

Answer: B. The large index contrast confines light tightly, so it can be bent at small radii of a few µm and devices can be packed densely

Light is confined by total internal reflection at the boundary between the high-index core and the low-index surroundings (cladding), and the larger the index contrast, the tighter the confinement. The difference between silicon and oxide is about 2, orders of magnitude larger than the core–cladding difference in optical fiber (less than 1%), allowing thin waveguides with cross-sections of about 0.5 µm × 0.22 µm and bend radii down to a few µm. On the other hand, the larger the index contrast, the more sidewall roughness scatters light, so propagation loss—though condition-dependent—is about 1–3 dB/cm for a typical strip waveguide (lower for rib waveguides or low-loss processes), far greater than fiber's (about 0.2 dB/km).

Silicon waveguide cross-sections (strip and rib) SiO₂ (n ≈ 1.45) Si (n ≈ 3.5) Optical mode SiO₂ cladding Buried oxide (BOX) Si substrate Width ~500 nm t = 220 nm SiO₂ cladding Buried oxide (BOX) Si substrate Width ~500 nm Slab Strip waveguide Rib waveguide Strong confinement, tight bends Slab connects to electrodes
Silicon waveguide cross-sections (strip and rib) · View in diagrams
Practice this topic Back to topic

Books on Silicon photonics Ad

As an Amazon Associate I earn from qualifying purchases.

More Silicon photonics questions

  1. When light travels from silicon (refractive index 3.48) toward oxide (refractive index 1.45), which is closest to the critical angle for total internal reflection (measured from the normal to the interface)?
  2. When light travels 5 mm through a silicon waveguide with a propagation loss of 2 dB/cm, which is closest to the fraction of optical power remaining at the output?
  3. Laser light with an output of +3 dBm reaches a photodetector after a total loss of 10 dB (fiber coupling, waveguides, modulator, etc.). Which is closest to the received power?
  4. What is the main role of the buried oxide (BOX) layer in the SOI wafers used in silicon photonics?
  5. What is the main reason rib waveguides—shallowly etched so that thin silicon slabs remain on both sides—are often used in silicon optical modulators?