Silicon photonics

Which correctly pairs the photon energy of 1.55 µm light with its behavior in a silicon waveguide? (E [eV] ≈ 1.24 / λ [µm])

  1. AAbout 1.9 eV. It exceeds silicon's band gap, so it is strongly absorbed and converted into current
  2. BAbout 0.8 eV. It is smaller than silicon's band gap, so it excites electrons into the conduction band and is strongly absorbed
  3. CAbout 0.8 eV. It is smaller than silicon's band gap, so it propagates with almost no absorption
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Answer: C. About 0.8 eV. It is smaller than silicon's band gap, so it propagates with almost no absorption

1.24 ÷ 1.55 ≈ 0.80 eV, which is smaller than silicon's band gap of about 1.12 eV, so it cannot lift valence-band electrons into the conduction band and no band-to-band absorption occurs. Silicon is therefore nearly transparent at telecom wavelengths and can serve as a waveguide material. Conversely, silicon alone cannot make a photodetector for this wavelength. Silicon absorbs light with wavelengths shorter than about 1.1 µm (energies above 1.12 eV). About 1.9 eV is the result of multiplying 1.24 by 1.55, and corresponds to the energy of red light at a wavelength of about 650 nm.

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More Silicon photonics questions

  1. Which correctly describes a silicon waveguide (refractive index about 3.5) surrounded by oxide (SiO2, refractive index about 1.45)?
  2. When light travels from silicon (refractive index 3.48) toward oxide (refractive index 1.45), which is closest to the critical angle for total internal reflection (measured from the normal to the interface)?
  3. When light travels 5 mm through a silicon waveguide with a propagation loss of 2 dB/cm, which is closest to the fraction of optical power remaining at the output?
  4. Laser light with an output of +3 dBm reaches a photodetector after a total loss of 10 dB (fiber coupling, waveguides, modulator, etc.). Which is closest to the received power?
  5. What is the main role of the buried oxide (BOX) layer in the SOI wafers used in silicon photonics?