Oxidation and diffusion

Which is a characteristic of radical oxidation, which uses oxygen radicals?

  1. AIt forms high-quality oxide even at relatively low temperatures, with little difference in rate between crystal orientations
  2. BIt always requires temperatures of 1200 °C or more
  3. CThe oxide thickness varies greatly with crystal orientation
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Answer: A. It forms high-quality oxide even at relatively low temperatures, with little difference in rate between crystal orientations

Oxygen radicals generated by plasma or similar means are highly reactive, so high-quality oxide forms even at relatively low temperatures. Compared with ordinary thermal oxidation, the difference in rate between orientations is small and corners oxidize uniformly, so it is used to oxidize 3D structures.

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More Oxidation and diffusion questions

  1. According to the Deal-Grove model, where does thermal oxidation take place?
  2. Which chemical reaction occurs in the dry thermal oxidation of silicon?
  3. Which is closest to the temperature range at which silicon thermal oxidation is generally carried out?
  4. Which correctly describes "diffusion" of impurities in semiconductor manufacturing?
  5. Which is a typical use of thermally grown silicon oxide?