Advanced transistors (FinFET and GAA)

Which correctly describes the structure of a FinFET?

  1. AThe gate wraps around a fin-shaped channel on three sides
  2. BA planar gate covers only the top of the channel
  3. CMetal contacts the channel directly with no gate insulator
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Answer: A. The gate wraps around a fin-shaped channel on three sides

A FinFET is a 3D transistor in which silicon is formed into a thin, upright fin, with the gate surrounding both sides and the top. Because the gate controls the channel from three sides, short-channel effects are easier to suppress than in planar transistors, and off-state leakage is reduced.

Cross-sections of a planar transistor and a FinFET Planar Gate Gate controls the top only FinFET Gate Fin Gate wraps the top and both sides
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More Advanced transistors (FinFET and GAA) questions

  1. Which correctly describes a GAA (gate-all-around) transistor?
  2. Which describes a short-channel effect in MOSFETs?
  3. What is the main reason for using high-k (high-dielectric-constant) materials for the gate insulator?
  4. What is the main purpose of applying strain (stress) to a transistor's channel?
  5. Which correctly describes EOT (equivalent oxide thickness)?