Advanced transistors (FinFET and GAA)

Which describes a short-channel effect in MOSFETs?

  1. AShortening the gate makes the gate capacitance infinite
  2. BShortening the gate always doubles the channel mobility
  3. CShortening the gate lowers the threshold voltage and increases off-state leakage
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Answer: C. Shortening the gate lowers the threshold voltage and increases off-state leakage

As the gate length shrinks, the drain's electric field increasingly affects the channel, making it harder for the gate alone to control the channel. The results include threshold voltage roll-off, threshold reduction by drain voltage (DIBL) and increased off-state leakage.

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More Advanced transistors (FinFET and GAA) questions

  1. What is the main reason for using high-k (high-dielectric-constant) materials for the gate insulator?
  2. What is the main purpose of applying strain (stress) to a transistor's channel?
  3. Which correctly describes EOT (equivalent oxide thickness)?
  4. Which correctly describes the SOI (silicon on insulator) structure?
  5. Which correctly describes DIBL (drain-induced barrier lowering)?