DRAM

Which correctly describes the idea of 3D DRAM, under research and development as a way to increase future DRAM capacity?

  1. AStacking memory cells vertically to increase capacity without relying only on planar scaling
  2. BIncreasing capacity just by making the chip larger
  3. CReplacing DRAM with SRAM
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Answer: A. Stacking memory cells vertically to increase capacity without relying only on planar scaling

Planar scaling of DRAM is becoming difficult, so 3D DRAM, which stacks memory cells vertically like 3D NAND, is under research and development. Structures that lay the capacitors and transistors horizontally and stack them are being considered.

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More DRAM questions

  1. In DRAM, what is the phenomenon in which repeatedly activating one row in a short time can flip data in adjacent rows?
  2. Which correctly describes the main leakage paths that determine the data retention time of DRAM cells?
  3. What does F mean in '6F²', used to express DRAM cell area?
  4. In DRAM access, what is the operation called that closes the open row and returns the bit lines to an intermediate voltage to prepare for activating the next row?
  5. Which function, adopted in DDR5, corrects errors inside the DRAM chip?