DRAM

In DRAM, what is the phenomenon in which repeatedly activating one row in a short time can flip data in adjacent rows?

  1. ASoft error
  2. BRow hammer
  3. CLatch-up
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Answer: B. Row hammer

Row hammer is a phenomenon in which repeatedly activating the word line of one row makes cells in adjacent rows lose charge more easily, flipping their data. It became apparent as scaling brought cells closer together and also became a security issue. Countermeasures include extra refreshes for rows next to frequently accessed ones.

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More DRAM questions

  1. Which correctly describes the main leakage paths that determine the data retention time of DRAM cells?
  2. What does F mean in '6F²', used to express DRAM cell area?
  3. In DRAM access, what is the operation called that closes the open row and returns the bit lines to an intermediate voltage to prepare for activating the next row?
  4. Which function, adopted in DDR5, corrects errors inside the DRAM chip?
  5. What is the performance limitation called that arises because improvements in memory bandwidth and latency have not kept up with improvements in processor performance?