DRAM

Which correctly describes the main leakage paths that determine the data retention time of DRAM cells?

  1. ASubthreshold leakage of the cell transistor and junction leakage
  2. BCharge generated by light
  3. CCharge moved by magnetic fields
Show answer and explanation

Answer: A. Subthreshold leakage of the cell transistor and junction leakage

The charge on a DRAM capacitor is lost mainly through subthreshold leakage when the cell transistor is off and through leakage at the storage-node junction (including GIDL). Reducing these extends retention time and lowers refresh frequency and power.

Practice this topic Back to topic

More DRAM questions

  1. What does F mean in '6F²', used to express DRAM cell area?
  2. In DRAM access, what is the operation called that closes the open row and returns the bit lines to an intermediate voltage to prepare for activating the next row?
  3. Which function, adopted in DDR5, corrects errors inside the DRAM chip?
  4. What is the performance limitation called that arises because improvements in memory bandwidth and latency have not kept up with improvements in processor performance?
  5. What does "RAM (random access memory)" in DRAM mean?