The ratio of impurity concentration in the crystal to that in the melt during solidification. For most impurities it is below 1, so they concentrate in the melt and the later part of a CZ crystal has higher impurity levels.
Field: Silicon wafers
Boron's segregation coefficient of about 0.8, close to 1, keeps its concentration relatively uniform from top to bottom of the ingot, making it easy to work with.
Which impurity is typically added to the melt to make p-typ…During solidification most impurities are rejected into the melt (segregation coefficient k < 1): phosphorus has k ≈ 0.35, arsenic about 0.3 and antimony about 0.023.
When a doped crystal is pulled by the CZ method, the dopant…Each dopant has a fixed concentration ratio across the Si/SiO2 interface—the segregation coefficient m (in silicon / in oxide).
When boron-doped silicon is thermally oxidized, how does th…Czochralski (CZ) method Ingot Threshold voltage Crystal orientation DZ (denuded zone) FZ method (float zone) Gettering MCZ method (magnetic-field-applied CZ) Monitor wafer Necking