What is Necking?
Growing a thin neck just after the seed at the start of CZ pulling. It lets dislocations created by thermal shock when the seed touches the melt escape, giving a dislocation-free crystal.
Field: Silicon wafers
Necking in the explanations
Narrowing the growth to about 3–5 mm in diameter lets them, propagating at an angle to the growth axis, run out to the surface, after which a dislocation-free crystal can be expanded to full diameter (Dash necking, 1958).
In the CZ method, what is the purpose of growing a thin nec…
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Related terms
Czochralski (CZ) method Crystal orientation DZ (denuded zone) FZ method (float zone) Gettering Ingot MCZ method (magnetic-field-applied CZ) Monitor wafer Notch Oxygen precipitates (BMD)