What is ReRAM (resistive RAM)?
Nonvolatile memory that applies voltage to form and break conductive paths in an oxide or similar material, storing information as differences in resistance.
Field: Emerging memories
ReRAM (resistive RAM) in the explanations
ReRAM is a simple stack of a thin film, such as a metal oxide, between electrodes.
Which correctly describes how ReRAM (resistive memory) stor…Most ReRAM cells start out highly resistive and need an initial voltage higher than normal operation to create a conductive path of oxygen vacancies or similar—forming.
In ReRAM, what is the initialization step called in which a…ReRAM commonly uses metal oxides such as hafnium oxide, tantalum oxide and titanium oxide.
Which is an example of a material researched and used as th…
Questions that mention ReRAM (resistive RAM) (9)
- Which correctly describes how ReRAM (resistive memory) stores data?
- In ReRAM, what is the initialization step called in which a relatively high voltage is first applied to form a conductive filament?
- Which is an example of a material researched and used as the switching layer of ReRAM?
- What challenge results from the large variation in resistance of ReRAM cells?
- What is the difference between "bipolar" and "unipolar" operation of ReRAM?
- Which non-volatile memory has been integrated on the same chip as logic circuits to store microcontroller programs?
- Which property does FeRAM (ferroelectric memory) use to store information?
- In general, which memory has the fewest possible rewrite cycles?
- Which memory changes resistance by having metal ions such as silver or copper move through a solid electrolyte to form or break a conductive path?
Related terms
MRAM FeRAM (ferroelectric RAM) CMOS Microcontroller PCM (phase-change memory) 3D XPoint Chalcogenide Cross-point memory Electroforming FeFET (ferroelectric FET)