Emerging memories

Which memory changes resistance by having metal ions such as silver or copper move through a solid electrolyte to form or break a conductive path?

  1. ACBRAM (conductive-bridge memory)
  2. BFeRAM
  3. CSTT-MRAM
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Answer: A. CBRAM (conductive-bridge memory)

In CBRAM, metal ions dissolve from an active metal electrode such as silver or copper into an electrolyte layer, and a voltage forms or breaks a metal conductive bridge (filament), switching between low and high resistance. It is sometimes classified as a type of resistive memory (ReRAM).

  • A. Correct. It uses a conductive bridge formed by metal ions.
  • B. FeRAM stores data as ferroelectric polarization.
  • C. STT-MRAM stores data as magnetization direction.
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More Emerging memories questions

  1. What is the difference between "bipolar" and "unipolar" operation of ReRAM?
  2. In cross-point memories such as PCM, which chalcogenide device, placed in series with the storage element as a selector, suddenly conducts above a certain voltage?
  3. Why must the read current be limited in STT-MRAM?
  4. Which device uses the fact that the tunneling current through a thin ferroelectric layer depends on the direction of its polarization?
  5. Which effect, being studied to reduce MRAM write energy, changes the magnetic anisotropy of a magnetic layer with a voltage?