Emerging memories

Which is an example of a material researched and used as the switching layer of ReRAM?

  1. APure copper
  2. BMetal oxides such as hafnium oxide and tantalum oxide
  3. CSingle-crystal silicon
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Answer: B. Metal oxides such as hafnium oxide and tantalum oxide

ReRAM often uses metal oxides such as hafnium oxide, tantalum oxide and titanium oxide. Voltage forms or dissolves conductive paths made of clustered oxygen vacancies in the film, changing its resistance. Compatibility with materials already used in CMOS processes is another advantage.

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More Emerging memories questions

  1. Which correctly describes how using non-volatile memory for caches and registers is expected to save system power?
  2. Which is a typical application in which FeRAM has been used?
  3. In which process of a logic LSI is the MRAM storage element (MTJ) generally built?
  4. Which phenomenon becomes a problem when phase-change memory is scaled, in which heat from writing reaches a neighboring cell and changes its state?
  5. What design challenge arises from the probabilistic nature of writing in STT-MRAM?