Emerging memories

Which correctly describes how ReRAM (resistive memory) stores data?

  1. AThrough differences in the magnetization direction of magnetic layers
  2. BBy applying voltage to a metal oxide or similar material to switch between high- and low-resistance states
  3. CThrough the presence or absence of charge stored in a capacitor
Show answer and explanation

Answer: B. By applying voltage to a metal oxide or similar material to switch between high- and low-resistance states

ReRAM sandwiches a thin film such as a metal oxide between electrodes, and applying voltage forms or dissolves conductive filaments in the film, changing its resistance greatly. With its simple structure, it is being developed as a fast, low-power non-volatile memory.

Practice this topic Back to topic

More Emerging memories questions

  1. How is information written in STT-MRAM?
  2. Which correctly describes the position of 'storage-class memory'?
  3. Compared with flash memory, which is a general advantage of MRAM?
  4. Which ferroelectric material, compatible with CMOS processes, has recently attracted attention for FeRAM and ferroelectric transistors (FeFETs)?
  5. In phase-change memory (PCM), how is a cell put into the high-resistance amorphous state (reset)?