Emerging memories

In ReRAM, what is the initialization step called in which a relatively high voltage is first applied to form a conductive filament?

  1. ADoping
  2. BForming
  3. CAnnealing
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Answer: B. Forming

Many ReRAM cells have high resistance right after manufacturing, and a relatively high voltage must first be applied to create the path that becomes the conductive filament. This is called forming. After that, the cell switches between high- and low-resistance states at lower voltages.

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More Emerging memories questions

  1. Which is a characteristic of SOT-MRAM?
  2. Which is one reason MRAM is attracting attention as embedded non-volatile memory for microcontrollers and similar chips?
  3. In MRAM, what problem tends to arise if the storage element (MTJ) is made too small?
  4. Why have MTJs with magnetization perpendicular to the film plane (perpendicular MTJs) become mainstream in recent STT-MRAM?
  5. In a cross-point memory with resistive elements placed at the intersections of row and column lines, which element is placed in series with the storage element to prevent current from sneaking through unselected cells?