A compound containing group 16 elements such as sulfur, selenium or tellurium. It is used as the recording material of phase-change memory (such as GST) and in selectors (OTS) that switch on abruptly above a threshold voltage.
Field: Emerging memories
An OTS (ovonic threshold switch) is a chalcogenide device that snaps to low resistance within nanoseconds once its threshold voltage is exceeded and returns to high resistance when the current drops.
In cross-point memories such as PCM, which chalcogenide dev…PCM heats chalcogenide materials such as GeSbTe with Joule heating from current and quenches them, switching between a low-resistance crystalline state and a high-resistance amorphous state.
Which correctly describes how phase-change memory (PCM) sto…GST is a chalcogenide of germanium (Ge), antimony (Sb) and tellurium (Te), typically Ge2Sb2Te5.
What kind of material is GST, the typical recording materia…PCM (phase-change memory) Threshold voltage 3D XPoint Cross-point memory Electroforming FeFET (ferroelectric FET) FeRAM (ferroelectric RAM) In-memory computing Magnetic tunnel junction (MTJ) MRAM