Emerging memories
What challenge results from the large variation in resistance of ReRAM cells?
- AThe margin for distinguishing high and low resistance shrinks, making multi-level storage and high capacity difficult
- BWriting becomes too fast
- CThe cells become lighter
Show answer and explanation
Answer: A. The margin for distinguishing high and low resistance shrinks, making multi-level storage and high capacity difficult
In ReRAM, conductive filaments form probabilistically, so resistance varies from cell to cell and from write to write. When the distributions of the high- and low-resistance states approach each other, the read margin shrinks, making it difficult to store multiple bits per cell or to build large arrays.