What is Read disturb?
In NAND flash, the gradual shift in threshold voltage of unread cells caused by the weak voltage applied to them when the same block is read many times.
Field: SRAM and flash memory
In NAND flash, the gradual shift in threshold voltage of unread cells caused by the weak voltage applied to them when the same block is read many times.
Field: SRAM and flash memory
Reading NAND applies a pass voltage of several volts to unselected cells so they conduct, and repeated reads slowly inject electrons that raise their threshold voltages—read disturb, which becomes significant after tens to hundreds of thousands of reads.
In NAND flash, what is the phenomenon in which repeatedly r…STT-MRAM passes current through the MTJ for both reading and writing, so a read current close to the switching current may flip the magnetization stochastically on each read (read disturb).
Why must the read current be limited in STT-MRAM?STT-MRAM Magnetic tunnel junction (MTJ) 3D NAND 6T SRAM cell Charge-trap cell Floating gate Fowler-Nordheim tunneling Garbage collection NAND flash memory Nonvolatile memory