What is Magnetic tunnel junction (MTJ)?

A structure with a thin insulating film between two magnetic layers. Resistance is low when the layers' magnetizations are parallel and high when antiparallel. It is the storage element of MRAM.

Two states of a magnetic tunnel junction (MTJ) Free layer (switchable) Tunnel barrier (MgO) Reference layer (fixed) Parallel Low resistance Antiparallel High resistance

Field: Emerging memories

Magnetic tunnel junction (MTJ) in the explanations

Questions that mention Magnetic tunnel junction (MTJ) (11)

  1. In MRAM, what problem tends to arise if the storage element (MTJ) is made too small?
  2. In which process of a logic LSI is the MRAM storage element (MTJ) generally built?
  3. Which correctly describes the tunnel magnetoresistance (TMR) ratio of an MTJ?
  4. In an MTJ, how do the resistances compare when the magnetizations of the two magnetic layers are parallel versus antiparallel?
  5. Which correctly describes the roles of the two magnetic layers in an MTJ?
  6. Which correctly describes how MRAM stores data?
  7. How is information written in STT-MRAM?
  8. Which is a characteristic of SOT-MRAM?
  9. How is data read from MRAM?
  10. What is the structure called that stores one bit in MRAM, consisting of two magnetic layers sandwiching a thin insulating layer?
  11. Why must the read current be limited in STT-MRAM?

Related terms

MRAM TMR ratio STT-MRAM PCM (phase-change memory) SOT-MRAM Read disturb 3D XPoint Chalcogenide Cross-point memory Electroforming

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