What is STT-MRAM?
MRAM that writes by flipping the magnetization of the MTJ's free layer using the spin-transfer torque of a spin-polarized current. It is in volume production as embedded non-volatile memory.
Field: Emerging memories
STT-MRAM in the explanations
In STT-MRAM, current flows through the MTJ, and electrons spin-polarized by the reference layer transfer angular momentum to the free layer (spin-transfer torque), flipping its magnetization; the current direction determines 0 or 1.
How is information written in STT-MRAM?This materials advance made volume production of STT-MRAM possible in the late 2010s.
Why have MTJs with magnetization perpendicular to the film …STT-MRAM switching is stochastic because of thermal fluctuations, so even with identical current and pulse width a write occasionally fails (the write error rate).
What design challenge arises from the probabilistic nature …
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Related terms
Magnetic tunnel junction (MTJ) MRAM ECC (error-correcting code) Read disturb 3D XPoint Chalcogenide Cross-point memory Electroforming FeFET (ferroelectric FET) FeRAM (ferroelectric RAM)