What is GIDL (gate-induced drain leakage)?
Off-state leakage caused by band-to-band tunneling in the strong field where the gate overlaps the drain. It is a concern for data retention in DRAM, among others.
Field: MOSFET
GIDL (gate-induced drain leakage) in the explanations
Even when a transistor is off, a large gate-to-drain voltage bends the bands sharply near the drain edge of the gate, and band-to-band tunneling causes current to flow—GIDL, which notably grows as the gate is driven more negative.
Which phenomenon increases off-state leakage because band-t…Even an off MOSFET leaks: subthreshold leakage below threshold, gate leakage through the dielectric, and junction leakage at the source/drain junctions (including GIDL).
Which combination lists the main components of leakage curr…Capacitor charge is lost mainly through subthreshold leakage of the off cell transistor and junction leakage at the storage node (including GIDL and defect-assisted generation).
Which correctly describes the main leakage paths that deter…
Questions that mention GIDL (gate-induced drain leakage) (3)
- Which phenomenon increases off-state leakage because band-to-band tunneling current flows due to the strong field where the gate overlaps the drain?
- Which combination lists the main components of leakage current in a MOSFET in the off state?
- Which correctly describes the main leakage paths that determine the data retention time of DRAM cells?
Related terms
DIBL NBTI (negative bias temperature instability) Refresh Body effect Channel-length modulation CMOS Flat-band voltage Inversion layer LDD structure Punch-through