MOSFET
Which phenomenon increases off-state leakage because band-to-band tunneling current flows due to the strong field where the gate overlaps the drain?
- ADIBL
- BNBTI
- CGIDL (gate-induced drain leakage)
Show answer and explanation
Answer: C. GIDL (gate-induced drain leakage)
Even when a transistor is off, if a large voltage exists between gate and drain, the field near the gate edge of the drain becomes strong and current flows by band-to-band tunneling. This is GIDL, a problem in devices that require extremely low leakage, such as DRAM cell transistors.