In a saturated MOSFET, raising the drain voltage moves the pinch-off point toward the source, shortening the effective channel and slightly increasing drain current. It makes the output resistance finite.
Field: MOSFET
Including channel-length modulation, saturation drain current rises slightly with VDS as ID(1 + λVDS), and the inverse of this slope is the output resistance ro ≈ 1/(λID).
Which expression appropriately gives the small-signal outpu…Raising the drain voltage moves it toward the source, shortening the effective channel and slightly increasing drain current—channel-length modulation.
In a MOSFET in saturation, what is the phenomenon in which …Body effect CMOS DIBL Flat-band voltage GIDL (gate-induced drain leakage) Inversion layer LDD structure Punch-through Short-channel effect Short-circuit current