Metrology and analysis

Which can be evaluated from C-V (capacitance-voltage) measurements of a MOS capacitor?

  1. APattern linewidth
  2. BOxide thickness, interface states, substrate doping concentration and more
  3. CThe number of particles on the wafer surface
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Answer: B. Oxide thickness, interface states, substrate doping concentration and more

Measuring capacitance while varying the voltage applied to a MOS capacitor shows capacitance changing with the accumulation, depletion and inversion states. From the curve, oxide thickness, flat-band voltage, interface state density, substrate doping concentration and more can be evaluated. It is a basic technique for evaluating gate dielectric quality.

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More Metrology and analysis questions

  1. What is the measurement called that shines light on periodic patterns and compares the spectrum of reflected and diffracted light with a model to determine linewidth and cross-sectional shape?
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