Lithography
What is an advantage of metal-oxide-containing resists being developed for EUV lithography?
- AThey absorb EUV light strongly and have high etch resistance even as thin films
- BThey need no exposure
- CThey absorb no light at all
Show answer and explanation
Answer: A. They absorb EUV light strongly and have high etch resistance even as thin films
Metal-containing resists absorb more EUV light than organic resists, so they react with less exposure and are expected to reduce the impact of stochastic fluctuations. Their high etch resistance also lets thin films serve as masks, which helps prevent fine patterns from collapsing.