What is Subthreshold swing?
The gate voltage needed to change drain current tenfold below threshold. Its theoretical lower limit at room temperature is about 60 mV per decade; the smaller it is, the sharper the on/off switching.
Field: MOSFET
Subthreshold swing in the explanations
The gate voltage needed to change it by a decade, the subthreshold swing S = (kT/q)·ln10·(1 + Cd/Cox), is about 60 mV/dec at room temperature even in the ideal case (Cd = 0).
Which value is closest to the theoretical lower limit of a …Subthreshold swing S = (kT/q)·ln10·(1 + Cd/Cox) approaches the ~60 mV/dec limit as non-gate capacitances (such as depletion) diminish.
How did the subthreshold swing (SS) generally change with t…This also sets the theoretical limit of the MOSFET subthreshold swing (about 60 mV/decade at room temperature), a fundamental reason supply voltages are hard to lower.
Which value is closest to the thermal voltage kT/q at room …
Questions that mention Subthreshold swing (6)
- Which value is closest to the theoretical lower limit of a MOSFET's subthreshold swing at room temperature (the gate voltage needed to change the drain current by one decade below threshold)?
- Which devices are being researched with the aim of breaking the 60 mV/dec subthreshold swing barrier?
- How did the subthreshold swing (SS) generally change with the move from planar transistors to FinFETs?
- Which value is closest to the thermal voltage kT/q at room temperature (300 K)?
- For an ideal diode (ideality factor n = 1) at room temperature, roughly how much must the forward voltage increase to raise the forward current tenfold?
- Which describes a short-channel effect in MOSFETs?
Related terms
Ideality factor Short-channel effect DIBL Body effect Channel-length modulation CMOS Flat-band voltage GIDL (gate-induced drain leakage) Inversion layer LDD structure