DRAM

What is the main purpose of burying the gate electrode in a trench in the silicon substrate (buried word line) in recent DRAM cell transistors?

  1. ATo make the cell emit light
  2. BTo lengthen the effective channel and suppress leakage while shrinking the cell
  3. CTo eliminate the need for a capacitor
Show answer and explanation

Answer: B. To lengthen the effective channel and suppress leakage while shrinking the cell

DRAM cell transistors need extremely low leakage so that the capacitor charge does not escape. Burying the gate in a trench allows a longer effective channel along the trench even with small planar dimensions, suppressing leakage due to short-channel effects.

Practice this topic Back to topic

More DRAM questions

  1. In DRAM, what is the main reason for splitting the address into row and column addresses and supplying them in turn through the same pins?
  2. What is the main purpose of dividing the inside of a DRAM into multiple banks?
  3. Why is the voltage change on the bit line very small when DRAM is read?
  4. Which correctly describes the idea of 3D DRAM, under research and development as a way to increase future DRAM capacity?
  5. In DRAM, what is the phenomenon in which repeatedly activating one row in a short time can flip data in adjacent rows?