CMP and cleaning

What is the main purpose of cleaning with a mixture of sulfuric acid and hydrogen peroxide (SPM)?

  1. ARemoving organics such as resist
  2. BRemoving native oxide
  3. CDepositing copper
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Answer: A. Removing organics such as resist

SPM has strong oxidizing power and decomposes and removes organics such as resist residues. It is often used hot, for example in cleaning after ashing. Native oxide is removed with dilute hydrofluoric acid.

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More CMP and cleaning questions

  1. What in particular must be removed by cleaning after CMP?
  2. What is an advantage of single-wafer cleaning tools, which process one wafer at a time?
  3. What is the main purpose of using IPA (isopropyl alcohol) when drying wafers after cleaning?
  4. Which method is used to detect the polishing endpoint in CMP?
  5. In Preston's equation for CMP removal rate, which quantity is the removal rate proportional to?