Emerging memories

In which process of a logic LSI is the MRAM storage element (MTJ) generally built?

  1. ABetween wiring layers in the interconnect (BEOL) process
  2. BWhen the silicon wafer is manufactured
  3. CAfter assembly into a package
Show answer and explanation

Answer: A. Between wiring layers in the interconnect (BEOL) process

MTJs are formed between wiring layers in the interconnect process, after the transistors have been made. They can be integrated without major changes to the transistor process, which makes it easy to embed non-volatile memory in logic LSIs. They must, however, withstand the heat treatments of the interconnect process.

Practice this topic Back to topic

More Emerging memories questions

  1. Which phenomenon becomes a problem when phase-change memory is scaled, in which heat from writing reaches a neighboring cell and changes its state?
  2. What design challenge arises from the probabilistic nature of writing in STT-MRAM?
  3. What challenge results from the large variation in resistance of ReRAM cells?
  4. In general, which memory has the fewest possible rewrite cycles?
  5. Which of the following is non-volatile memory that retains data after power is removed?