Emerging memories

Which is a characteristic of SOT-MRAM?

  1. AIt is written by irradiating it with light
  2. BIt stores data as charge in a capacitor
  3. CIt reverses magnetization with spin-orbit torque from current in a heavy-metal layer, allowing separate current paths for writing and reading
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Answer: C. It reverses magnetization with spin-orbit torque from current in a heavy-metal layer, allowing separate current paths for writing and reading

SOT-MRAM reverses the magnetization of the storage layer using spin-orbit torque generated when current flows through a heavy-metal layer beneath the MTJ. Because the write current does not pass through the tunnel barrier, the barrier degrades less and fast writes are possible, so it is expected to be used for caches.

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More Emerging memories questions

  1. Which is one reason MRAM is attracting attention as embedded non-volatile memory for microcontrollers and similar chips?
  2. In MRAM, what problem tends to arise if the storage element (MTJ) is made too small?
  3. Why have MTJs with magnetization perpendicular to the film plane (perpendicular MTJs) become mainstream in recent STT-MRAM?
  4. In a cross-point memory with resistive elements placed at the intersections of row and column lines, which element is placed in series with the storage element to prevent current from sneaking through unselected cells?
  5. Which is a characteristic of a FeFET, which uses a ferroelectric as the gate insulator?