SRAM and flash memory

What is the advantage of an 8T SRAM cell, which adds read-only transistors to a 6T SRAM cell?

  1. AThe cell area is smaller than 6T
  2. BData remains when power is turned off
  3. CCell data is less likely to be disturbed during reads, so it operates stably even at low voltage
Show answer and explanation

Answer: C. Cell data is less likely to be disturbed during reads, so it operates stably even at low voltage

In a 6T cell, charge on the bit line can affect the cell's storage node during a read and may flip the data. An 8T cell separates a dedicated read path, so reading does not disturb the storage node and the cell operates stably even at low voltage. In return, its area is larger.

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More SRAM and flash memory questions

  1. In flash memory erase, what happens to a cell's threshold voltage when electrons are removed from the floating gate or similar layer?
  2. Which is closest to the number of layers in recent 3D NAND?
  3. In NAND flash, what is the role of the select transistors placed at both ends of the series-connected memory cells?
  4. When writing to an SRAM cell, one bit line is pulled down to 0 V to flip the cell's state. What condition is required of the access transistor?
  5. In NAND flash, which programming method applies repeated program pulses with gradually increasing voltage, checking the threshold voltage after each one?