SRAM and flash memory

In NAND flash, what is the role of the select transistors placed at both ends of the series-connected memory cells?

  1. ATo amplify the cell signal
  2. BTo connect or disconnect the string (series of cells) being read or written to the bit line and source line
  3. CTo erase data
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Answer: B. To connect or disconnect the string (series of cells) being read or written to the bit line and source line

In NAND, each string of dozens of series-connected cells has select transistors at both ends, and only the string being accessed is connected to the bit line and source line. Disconnecting unselected strings prevents errors during programming and reading.

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More SRAM and flash memory questions

  1. When writing to an SRAM cell, one bit line is pulled down to 0 V to flip the cell's state. What condition is required of the access transistor?
  2. In NAND flash, which programming method applies repeated program pulses with gradually increasing voltage, checking the threshold voltage after each one?
  3. Which command notifies an SSD of space freed by files deleted by the OS, making garbage collection more efficient?
  4. Which non-volatile memory has been integrated on the same chip as logic circuits to store microcontroller programs?
  5. Which orders SLC, MLC and TLC from the most rewrite cycles to the fewest?