Epitaxial growth

Which are the main quality items controlled for epitaxial wafers?

  1. AThe wafer's color and weight
  2. BThe epitaxial layer's thickness, resistivity (doping) and crystal defects
  3. COnly the wafer's price
Show answer and explanation

Answer: B. The epitaxial layer's thickness, resistivity (doping) and crystal defects

For epitaxial wafers, it is important that the epitaxial layer's thickness and resistivity (doping) meet specifications and are uniform across the wafer. Crystal defects such as stacking faults, particles and flatness are also controlled.

Practice this topic Back to topic

More Epitaxial growth questions

  1. In SiC epitaxial growth, what is the main reason for using substrates tilted a few degrees from the crystal axis (with an off-angle)?
  2. Which is an advantage of performing silicon epitaxial growth at reduced pressure?
  3. Which method measures the thickness of a lightly doped epitaxial layer on a heavily doped substrate using infrared interference?
  4. What is the main challenge in growing GaN on Si substrates?
  5. What is it called when doping gas is flowed during epitaxial growth to add dopants at the same time as growth?