Epitaxial growth

Which gases are used as sources for silicon epitaxial growth?

  1. AArgon only
  2. BTrichlorosilane (SiHCl3) and dichlorosilane (SiH2Cl2)
  3. COxygen
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Answer: B. Trichlorosilane (SiHCl3) and dichlorosilane (SiH2Cl2)

Silicon epitaxy uses silicon-containing gases such as trichlorosilane, dichlorosilane and silane together with hydrogen. They decompose and are reduced at high temperature, depositing silicon on the substrate. Phosphine, diborane and similar gases are added for doping.

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More Epitaxial growth questions

  1. Which correctly describes selective epitaxial growth?
  2. What is the phenomenon called in which impurities from the substrate or elsewhere are incorporated into the growing layer through the gas phase during epitaxial growth?
  3. What is an advantage of a wafer with a lightly doped p-type epitaxial layer grown on a p+ substrate (p/p+ epitaxial wafer)?
  4. Which correctly describes the critical thickness in heteroepitaxial growth?
  5. What is the main purpose of heating the wafer in high-temperature hydrogen just before silicon epitaxial growth?