Epitaxial growth

Which correctly describes epitaxial growth?

  1. AGrowing a single-crystal thin film on a single-crystal substrate with the same crystal orientation as the substrate
  2. BDepositing an amorphous film on a substrate
  3. CMelting the substrate at high temperature and recrystallizing it
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Answer: A. Growing a single-crystal thin film on a single-crystal substrate with the same crystal orientation as the substrate

In epitaxial growth, atoms stack up following the crystal arrangement of the substrate, forming a single-crystal film with the same orientation. Because layers with doping different from the substrate can be made precisely, it is used for high-resistivity layers of power devices and substrates for CMOS image sensors.

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More Epitaxial growth questions

  1. Which is an example of heteroepitaxial growth?
  2. What is MOCVD (metal-organic chemical vapor deposition) mainly used for?
  3. What problem tends to occur when there is a large difference in lattice constant (lattice mismatch) between the substrate and the grown film?
  4. Which is a characteristic of MBE (molecular beam epitaxy)?
  5. Which gases are used as sources for silicon epitaxial growth?