A transistor with a ferroelectric gate insulator. Its threshold voltage depends on the polarization direction, so a single transistor can store data non-volatilely and be read non-destructively.
Field: Emerging memories
In a FeFET, the polarization direction of the ferroelectric gate dielectric changes the charge induced in the channel, shifting the threshold voltage.
Which is a characteristic of a FeFET, which uses a ferroele…Threshold voltage 3D XPoint Chalcogenide Cross-point memory Electroforming FeRAM (ferroelectric RAM) In-memory computing Magnetic tunnel junction (MTJ) MRAM PCM (phase-change memory)