Emerging memories

What design challenge arises from the probabilistic nature of writing in STT-MRAM?

  1. AWriting requires light
  2. BMargins in write current and pulse width, or combination with error correction, are needed
  3. CWrites always fail
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Answer: B. Margins in write current and pulse width, or combination with error correction, are needed

Magnetization reversal in STT-MRAM is a probabilistic phenomenon affected by thermal fluctuation, so even with the same current and pulse width, writes occasionally fail. Reliability is ensured by adding margin to current and pulse width, verifying after writes, and combining error-correcting codes.

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More Emerging memories questions

  1. What challenge results from the large variation in resistance of ReRAM cells?
  2. In general, which memory has the fewest possible rewrite cycles?
  3. Which of the following is non-volatile memory that retains data after power is removed?
  4. What does the "M" in MRAM stand for?
  5. Which correctly describes the idea of "universal memory" that many emerging memory efforts have aimed for?