A DRAM phenomenon in which repeatedly activating the same row in a short time drains charge from cells in neighboring rows and flips their data. Because it can be exploited in attacks, countermeasures are built into DRAMs and memory controllers.
Field: DRAM
Rowhammer occurs when a row is activated tens of thousands of times in a short period, causing word-line voltage swings and charge migration that drain neighboring cells and flip their data.
In DRAM, what is the phenomenon in which repeatedly activat…Refresh 1T1C cell Bank Bit line CAS latency DDR SDRAM DIMM ECC (error-correcting code) LPDDR Memory wall