What is Built-in potential?

The potential difference across the depletion layer of a PN junction even with no external voltage applied. About 0.6 to 0.8 V in silicon, it forms the barrier that stops further carrier diffusion.

Field: PN junctions and diodes

Built-in potential in the explanations

Questions that mention Built-in potential (7)

  1. How does the depletion width of a one-sided abrupt junction depend on the reverse bias voltage V (when V is much larger than the built-in potential)?
  2. What does the Fermi level mean?
  3. What are the majority carriers in a p-type semiconductor?
  4. How is voltage applied to forward-bias a PN junction diode?
  5. What happens to the width of the depletion layer when the reverse bias applied to a PN junction is increased?
  6. How does the built-in (diffusion) potential of a PN junction relate to the doping on each side?
  7. When a reverse bias is applied to an abrupt PN junction, where is the electric field strongest?

Related terms

Junction capacitance (depletion capacitance) Fermi level Flat-band voltage Forward bias Depletion layer Numerical aperture (NA) Avalanche breakdown Conductivity modulation Diffusion capacitance Ideality factor

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