PN junctions and diodes

When a reverse bias is applied to an abrupt PN junction, where is the electric field strongest?

  1. AAt the junction interface where p-type meets n-type
  2. BAt the edges of the depletion layer
  3. CAt the contacts with the electrodes
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Answer: A. At the junction interface where p-type meets n-type

The field in the depletion layer is built up by integrating the charges of the ionized impurities; it is zero at the depletion layer edges and maximum at the metallurgical junction. Avalanche breakdown occurs when this maximum field reaches the critical field.

  • A. Correct. The field peaks at the junction interface.
  • B. The field is zero at the edges of the depletion layer.
  • C. There is almost no field in the neutral regions near the electrodes.
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More PN junctions and diodes questions

  1. Which correctly describes the depletion approximation used in analyzing PN junctions?
  2. How is voltage applied to forward-bias a PN junction diode?
  3. What happens to the width of the depletion layer when the reverse bias applied to a PN junction is increased?
  4. Which phenomenon does a voltage-regulator (Zener) diode mainly use?
  5. Which correctly describes the relationship between forward current and forward voltage of a PN junction diode?