Lithography

Which correctly describes masks used in EUV lithography?

  1. AReflective masks with an absorber pattern on a multilayer mirror that reflects light
  2. BTransmissive masks through which light passes glass
  3. CNo mask is used
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Answer: A. Reflective masks with an absorber pattern on a multilayer mirror that reflects light

Because almost all materials absorb EUV light, transmissive masks cannot be used. EUV masks are reflective, with a pattern of light-absorbing material on a multilayer mirror of alternating molybdenum and silicon layers.

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More Lithography questions

  1. Which is the correct general order of lithography steps?
  2. What is the technique called that transfers a pattern by pressing a mold with fine patterns into resist?
  3. Which equipment is mainly used to write the patterns of photomasks (reticles)?
  4. What is the role of the thin membrane (pellicle) stretched over a photomask at a fixed distance?
  5. What is the main purpose of the bottom anti-reflective coating (BARC) applied under resist?