Ion implantation

Which gas is typically used in the ion source of an implanter to produce boron ions?

  1. ABoron trifluoride (BF3)
  2. BArgon
  3. COxygen
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Answer: A. Boron trifluoride (BF3)

In the ion source, gases such as BF3 are decomposed and ionized by a discharge to produce ions such as B⁺ and BF2⁺. Phosphine (PH3) is used for phosphorus and arsine (AsH3) for arsenic. The desired ions are selected in the mass analyzer.

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More Ion implantation questions

  1. Which is an example of an application of high-energy ion implantation reaching several MeV?
  2. If dopants with a dose of 1×10¹⁵ cm⁻² are distributed uniformly over a depth of 100 nm, what is the approximate average concentration?
  3. Which ion implantation is used for wafer splitting (Smart Cut) and for lifetime control in power devices?
  4. When an amorphized layer is recrystallized, what are the defects called that remain slightly deeper than the original boundary between the amorphous layer and the crystal?
  5. What is the principle of ion implantation?