When an amorphized layer is recrystallized, what are the defects called that remain slightly deeper than the original boundary between the amorphous layer and the crystal?

Answer: A. EOR (end-of-range) defects

Excess interstitial silicon gathers on the crystal side just below the amorphized layer. Even after recrystallization by annealing, defects such as dislocation loops can remain at this depth; these are called EOR defects. Because they cause leakage if left near a junction, they are controlled through implant and anneal conditions.