Ion implantation

Which ion implantation is used for wafer splitting (Smart Cut) and for lifetime control in power devices?

  1. AHigh-dose arsenic implantation
  2. BImplantation of light ions such as hydrogen and helium
  3. CLow-energy antimony implantation
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Answer: B. Implantation of light ions such as hydrogen and helium

Implanting hydrogen creates tiny cavities at the implant depth, from which the wafer can be split by heat treatment (Smart Cut). Defects created by hydrogen or helium implantation also act as recombination centers, so they are used to locally shorten carrier lifetime in power devices and speed up switching.

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More Ion implantation questions

  1. When an amorphized layer is recrystallized, what are the defects called that remain slightly deeper than the original boundary between the amorphous layer and the crystal?
  2. What is the principle of ion implantation?
  3. Which unit is commonly used to express the acceleration energy in ion implantation?
  4. Which correctly pairs dopants implanted into silicon with the conductivity type they produce?
  5. Which is closest to the range of ion implantation doses used in LSI manufacturing?