Ion implantation

Which is an example of an application of high-energy ion implantation reaching several MeV?

  1. AForming very shallow junctions at the surface
  2. BIntroducing dopants deep below the surface in image sensors, power devices and similar devices
  3. CForming metal wiring
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Answer: B. Introducing dopants deep below the surface in image sensors, power devices and similar devices

High-energy implantation can place dopants several µm below the surface. It is used for deep photodiodes and pixel isolation in CMOS image sensors, deep layers in power devices, and retrograde wells.

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More Ion implantation questions

  1. If dopants with a dose of 1×10¹⁵ cm⁻² are distributed uniformly over a depth of 100 nm, what is the approximate average concentration?
  2. Which ion implantation is used for wafer splitting (Smart Cut) and for lifetime control in power devices?
  3. When an amorphized layer is recrystallized, what are the defects called that remain slightly deeper than the original boundary between the amorphous layer and the crystal?
  4. What is the principle of ion implantation?
  5. Which unit is commonly used to express the acceleration energy in ion implantation?