CMP and cleaning

Which set correctly lists the kinds of surface contamination removed from wafers by cleaning?

  1. ALight, sound and heat
  2. BElectrons, holes and implanted dopants
  3. CParticles, metal contamination, organic contamination, native oxide and so on
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Answer: C. Particles, metal contamination, organic contamination, native oxide and so on

Contamination removed by cleaning includes tiny particles, metals such as iron and copper, organics from resist residue or the air, and unwanted native oxide. Solutions suited to each are combined to remove them.

  • A. Light, sound and heat are not contamination.
  • B. Carriers and intentionally introduced dopants are not targets of cleaning.
  • C. Correct. Particles, metals, organics, native oxide and so on.
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More CMP and cleaning questions

  1. In processes such as multilevel wiring, what is the main reason the wafer surface must be planarized by CMP?
  2. Which correctly describes the basic configuration of a CMP tool?
  3. In Cu interconnect CMP, why is polishing generally divided into stages?
  4. Which correctly describes the general difference between hard and soft CMP polishing pads?
  5. What is the state of a silicon surface whose last cleaning step was dilute hydrofluoric acid?