What is HBT (heterojunction bipolar transistor)?
A bipolar transistor using materials with different band gaps for the emitter and base. Types include SiGe and GaAs-based devices, used in high-frequency amplifiers.
Field: Bipolar transistors
HBT (heterojunction bipolar transistor) in the explanations
A SiGe HBT is a heterojunction bipolar transistor with a narrow-bandgap SiGe base.
Which is a characteristic of a SiGe HBT (heterojunction bip…The base of a SiGe HBT is formed by low-temperature epitaxy of a SiGe layer tens of nm thick, doped with boron during growth.
Which technology is used to form the base layer of a SiGe H…Compatible with silicon processing, it is used in HBT bases, in pMOS source/drain regions that apply compressive strain, and as sacrificial layers when forming GAA transistors.
How is silicon germanium (SiGe) classified?
Questions that mention HBT (heterojunction bipolar transistor) (5)
- Which is a characteristic of a SiGe HBT (heterojunction bipolar transistor)?
- Which technology is used to form the base layer of a SiGe HBT?
- How is silicon germanium (SiGe) classified?
- Compared with thermal diffusion, what is an advantage of adding dopants during epitaxial growth?
- What is the typical thickness range of the epitaxial layer on silicon epi wafers for LSIs and power devices?
Related terms
SiGe (silicon-germanium) GAA (gate-all-around) Thermal diffusion Epitaxial growth SiC (silicon carbide) Common-emitter circuit Crossover distortion Current gain (hFE) Current mirror Cutoff region