Silicon wafers

Which is a characteristic of single-crystal silicon made by the FZ (floating zone) method?

  1. AIt is the easiest to scale to large diameters and is the mainstream method for 300 mm wafers
  2. BBecause no quartz crucible is used, it contains little oxygen and other impurities, making high-resistivity crystals easy to obtain
  3. CIt turns polycrystalline silicon into a single crystal without melting it
Show answer and explanation

Answer: B. Because no quartz crucible is used, it contains little oxygen and other impurities, making high-resistivity crystals easy to obtain

In the FZ method, a band of a polysilicon rod is melted by RF heating, and the molten zone is moved to convert the rod into a single crystal. Without a crucible, little oxygen is incorporated, giving high-purity, high-resistivity crystals used for power devices and similar applications. Large diameters are easier with the CZ method.

Practice this topic Back to topic

More Silicon wafers questions

  1. What is the main role of the notch (small cutout) on the edge of a silicon wafer?
  2. Which correctly describes gettering?
  3. Which impurity is incorporated in relatively large amounts from the crucible into silicon crystals grown by the CZ method?
  4. What is the most appropriate order of steps for making wafers from a single-crystal ingot?
  5. Which correctly describes a typical method of manufacturing SOI wafers?